Nov. 20 News: According to Korean media reports, by the third quarter of this year, Korean companies producedDRAMChips already account for 75% of the global market, of whichSamsungAnd SK Hailishi occupied an important po
On the micronet news, the China World Trade Center Ministry of economic affairs of Taiwan issued a control order for ZnO components of the semiconductor factory, which burned to the DRAM industry. Taiwan's largest memory chip maker, South Asia, has confirmed that the company's short-term shipments will be affected by the official request that the shipments must first be applied and approved to be released.
According to the micro-network news, Nan Yake, a maker of memory chip makers in Taiwan, held a law meeting yesterday (17th), announcing that the gross profit margin rushed to 51.8% in the first quarter of this year, which was better than market expectations.
Industrial Research Institute of ITRI (IEK) cited market research institutions survey report pointed out that last year the global DRAM prices soar, the output value increased by about 77%, reaching 72.5 billion US dollars, the average sales price rose 55%; this year, the pre- Estimated or in short supply, although the strength is not as good as last year's growth, but the major suppliers are still increasing their production under control. The average selling price is expected to rise more than 32% this year, and its annual output value will increase by about 23% to nearly 90 billion U.S. dollars , A new high over the years.
Memory module maker Wei yesterday (8) announced last December consolidated revenue of 2.552 billion yuan (NT, the same below), a decrease of 13.3%, an increase of 12.65%, the fourth quarter consolidated revenue of 8.228 billion yuan quarter, quarter Up by 0.84%, the year-on-year single-season high. The cumulative total revenue for the full year last year was 32.225 billion yuan, up 38.8% year-on-year and reaching a new high in 4 years.
Form：New electronics 2018/1/2Browse：2161
Attacking DRAM market opportunities, Samsung Electronics announced the mass production of its second generation of 10 nanometer level (1y-nm) 8Gb DDR4 DRAM. The unit uses a high-sensitivity Cell Data Sensing System and an Air Spacer solution for higher performance, lower power consumption, and smaller footprint.
This week, according to the Yonhap news agency, Samsung Electronics announced that it has started using the second-generation 10nm process to produce 8Gb DDR4 particles, another iteration of technology after two years of the first-generation 10nm process.